Preparing p-type ZnO by micro-oxidation of PVD-ZnN

In this study, a micro-oxidation process was proposed to prepare p-type conductive zinc oxide (ZnO) films. The zinc nitride (ZnN) was used as the precursor and oxidized slightly. During the micro-oxidation, a hydrogen peroxide (H2O2) was used to oxidize ZnN to a nitrogen-contained ZnO material (ZnO:...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 2019-02, Vol.58 (SA), p.SAAF02
Main Authors: Lin, Chiung-Wei, Liu, Po-Cheng
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this study, a micro-oxidation process was proposed to prepare p-type conductive zinc oxide (ZnO) films. The zinc nitride (ZnN) was used as the precursor and oxidized slightly. During the micro-oxidation, a hydrogen peroxide (H2O2) was used to oxidize ZnN to a nitrogen-contained ZnO material (ZnO:N) at room temperature. Since ZnN film was oxidized slightly, there were N atoms residing within the processed film. The presence of nitrogen (N) atoms in the processed film made the completed ZnO:N being p-type conductive. This p-type conduction was attributed to that these N atoms form "No" states in ZnO:N film, which act as acceptors. The carrier concentration and resistivity of the optimized oxidized ZnN film were 1.36 × 1014 cm−3 and 1.31 × 103 cm, respectively. A good rectified current-voltage characteristic with a turn-on voltage of 2.76 V was achieved for the optimized ZnO/ZnO:N junction.
ISSN:0021-4922
1347-4065
DOI:10.7567/1347-4065/aaec13