Density functional theory study on the effect of NO annealing for SiC(0001) surface with atomic-scale steps

Abstract The effect of NO annealing on the electronic structures of the 4H-SiC(0001)/SiO 2 interface with atomic-scale steps is investigated. The characteristic behavior of conduction band edge (CBE) states is strongly affected by the atomic configurations in the SiO 2 and the step structure, result...

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Bibliographic Details
Published in:Applied physics express 2024-01, Vol.17 (1), p.11009
Main Authors: Uemoto, Mitsuharu, Funaki, Nahoto, Yokota, Kazuma, Hosoi, Takuji, Ono, Tomoya
Format: Article
Language:English
Subjects:
Density functional theory
Electronic structure
Interface step
NO annealing
SiC MOS interface
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Summary:Abstract The effect of NO annealing on the electronic structures of the 4H-SiC(0001)/SiO 2 interface with atomic-scale steps is investigated. The characteristic behavior of conduction band edge (CBE) states is strongly affected by the atomic configurations in the SiO 2 and the step structure, resulting in the discontinuity of the CBE states at the step edges, which prevents electrons from penetrating from the source to drain and decreases the mobile free-electron density. We found that the behavior of the CBE states becomes independent from the atomic configuration of the SiO 2 and the density of the discontinuities is reduced after NO annealing.
ISSN:1882-0778
1882-0786
DOI:10.35848/1882-0786/ad1bc3