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Crystallization of Cu-doped thin Ge film assisted with a Cu-Ge droplet

We observed the crystallization process of an amorphous germanium (a-Ge) thin film, including copper (Cu) nanoparticles in the intermediate position of the structures in terms of depth, by using in situ TEM. It was found that a nanoscale droplet was formed around the Cu nanoparticles at 500 °C, whic...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2020-08, Vol.59 (8), p.88004
Main Authors: Hara, Akito, Suzuki, Hitoshi, Utsumi, Hiroki, Miyazaki, Ryo, Kitahara, Kuninori
Format: Article
Language:English
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Summary:We observed the crystallization process of an amorphous germanium (a-Ge) thin film, including copper (Cu) nanoparticles in the intermediate position of the structures in terms of depth, by using in situ TEM. It was found that a nanoscale droplet was formed around the Cu nanoparticles at 500 °C, which is lower than the eutectic temperature of the bulk Cu-Ge system (640 °C); following which, the nanoscale droplets solidified at the same temperature. The existence of a nanoscale liquid phase at a temperature lower than the bulk eutectic temperature is consistent with the eutectic system with gold nanoparticles on the Ge film.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/aba6fd