Influence of silicon wafer surface roughness on semiconductor device characteristics

The surface roughness of silicon wafer is one of the most important issues that degrade characteristics of semiconductor devices. The importance of spatial roughness frequency as an influential parameter has been pointed. In this research, the effect of roughness frequency on MOSFET characteristics...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2020-07, Vol.59 (SM), p.SMMB06
Main Authors: Mori, Keiichiro, Samata, Shuichi, Mitsugi, Noritomo, Teramoto, Akinobu, Kuroda, Rihito, Suwa, Tomoyuki, Hashimoto, Keiichi, Sugawa, Shigetoshi
Format: Article
Language:English
Subjects:
Ebd
Mobility
Qbd
roughness
SILC
silicon wafer
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Summary:The surface roughness of silicon wafer is one of the most important issues that degrade characteristics of semiconductor devices. The importance of spatial roughness frequency as an influential parameter has been pointed. In this research, the effect of roughness frequency on MOSFET characteristics was studied using samples with different roughness for frequency. From the obtained results, it was found that roughness with a low spatial wavelength affects electron mobility and gate insulating film reliability such as Ebd, Qbd and SILC.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ab918c