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Activation and Dissociation of Proton-Induced Donor Profiles in Silicon
The impact of the thermal budget on the introduction and dissociation of hydrogen-related donor profiles in high purity silicon implanted with protons in the energy range of MeV is investigated. The hydrogen-related donors are radiation-induced defect complexes decorated by the implanted hydrogen. T...
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Published in: | ECS journal of solid state science and technology 2013-01, Vol.2 (9), p.P389-P394 |
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Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | The impact of the thermal budget on the introduction and dissociation of hydrogen-related donor profiles in high purity silicon implanted with protons in the energy range of MeV is investigated. The hydrogen-related donors are radiation-induced defect complexes decorated by the implanted hydrogen. The appearance of the donor profiles is limited to the annealing temperature regime between about 350 °C and 500 °C. The activation of the doping profiles is limited by the diffusion of the implanted hydrogen from the end-of-range region throughout the radiation-induced damage profile. This formation process is adequately described by a diffusion model with an effective activation energy of 1.2 eV. The thermal stability of the hydrogen-related donor profiles is limited by the dissociation of the donors. The deactivation of the doping is modeled by two hydrogen-related donor species with effective dissociation energies of 2.6 eV and 3 eV. The formation and dissociation mechanisms described in the present study define the upper and lower limits of the post-implantation thermal budget, respectively, for a sensible use of proton implantation doping in crystalline silicon. |
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ISSN: | 2162-8769 2162-8777 |
DOI: | 10.1149/2.028309jss |