Epitaxial Growth of Single-Crystalline Monolayer MoS2 by Two-Step Method

In this paper we report a two step method to grow triangle-shaped single-crystal MoS2 on 〈0001〉-oriented sapphire substrate. XPS showed the growth progress is van der walls epitaxial. The largest triangle is about 200 μm in lateral. Raman and AFM results indicate that the triangles are monolayer. Th...

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Bibliographic Details
Published in:ECS solid state letters 2015-01, Vol.4 (3), p.P19-P21
Main Authors: Lan, Feifei, Lai, Zhanping, Yan, Ruyue, Xu, Yongkuan, Cheng, Hongjuan, Zhang, Song, Chen, Jianli, Jia, Zhenyu, Wang, Zaien, Qi, Chengjun
Format: Article
Language:English
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Summary:In this paper we report a two step method to grow triangle-shaped single-crystal MoS2 on 〈0001〉-oriented sapphire substrate. XPS showed the growth progress is van der walls epitaxial. The largest triangle is about 200 μm in lateral. Raman and AFM results indicate that the triangles are monolayer. The process is simple and controllable.The sulfidation time has a great influence on the triangle size. With enough sulfidation time, all the MoS2 flakes will be monolyaer. Prolonging the time of sulfidation, the triangles grow larger in size.
ISSN:2162-8742
2162-8750
DOI:10.1149/2.0041502ssl