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Communication—Current Oscillations in Photoelectrochemical Etching of Monocrystalline 4H Silicon Carbide
Photoelectrochemical etching of monocrystalline 4H silicon carbide was performed under constant voltage condition. For the first time current oscillations were observed that caused a periodic modulation of the resulting pore diameter in etching direction. The period length of the pore diameter varia...
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Published in: | ECS journal of solid state science and technology 2021-07, Vol.10 (7), p.73003 |
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Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Photoelectrochemical etching of monocrystalline 4H silicon carbide was performed under constant voltage condition. For the first time current oscillations were observed that caused a periodic modulation of the resulting pore diameter in etching direction. The period length of the pore diameter variation could be estimated to be about 20 nm. Additionally, it was observed that the assembly of the pores in a top down view is a Turing pattern. |
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ISSN: | 2162-8769 2162-8777 |
DOI: | 10.1149/2162-8777/ac10b3 |