Characterization of Mono-Crystalline and Multi-Crystalline Silicon by the Extended Lateral Photovoltage Scanning and Scanning Photoluminescence

Lateral Photovoltage Scanning (LPS) and Scanning Photoluminescence (SPL) methods are used simultaneously to reveal spatial distribution of electrically active defects in crystalline silicon. Defect information can be gained fast by measuring the phase shift between laser modulation and the LPS/SPL s...

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Bibliographic Details
Published in:ECS journal of solid state science and technology 2020-01, Vol.9 (8), p.86001
Main Authors: Buchovska, Iryna, Lüdge, Anke, Lüdge, Wolfgang, Kiessling, Frank M.
Format: Article
Language:English
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Summary:Lateral Photovoltage Scanning (LPS) and Scanning Photoluminescence (SPL) methods are used simultaneously to reveal spatial distribution of electrically active defects in crystalline silicon. Defect information can be gained fast by measuring the phase shift between laser modulation and the LPS/SPL signals detected as the real and imaginary parts of the measurement signals. The laser power was varied from 10 W to 100 mW at laser wavelengths of 660 nm and 830 nm. Simultaneously detected LPS and SPL signals from one and the same excited spot were used to determine minority charge carrier lifetimes. The signal gathering by two different methods shows a huge benefit to investigate the nature of recombination active defects. The minority carrier lifetime determined by SPL depends on the injection level while the minority lifetime analysed by LPS does not show a similar behaviour. Defect-related charge minority carrier lifetime maps of SPL scans show high similarity to those measured by MDP but have a higher local resolution. To investigate the smoothing effect, LPS measurements were made on mc-Si and FZ-Si samples.
ISSN:2162-8769
2162-8777
2162-8777
DOI:10.1149/2162-8777/abb418