In Situ Electrical Studies of Ozone Based Atomic Layer Deposition on Graphene

In this study, we present in-situ electrical studies of back-gated graphene field-effect transistors (GFETs) exposed to ozone at room temperature. Here, we compare the effect of the ozone exposure on transport characteristics in two different environments using a vacuum probe station with static vac...

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Bibliographic Details
Main Authors: Jandhyala, Srikar, Mordi, Greg, Lee, Bongki, Kim, Jiyoung
Format: Conference Proceeding
Language:English
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Summary:In this study, we present in-situ electrical studies of back-gated graphene field-effect transistors (GFETs) exposed to ozone at room temperature. Here, we compare the effect of the ozone exposure on transport characteristics in two different environments using a vacuum probe station with static vacuum and an atomic layer deposition (ALD) chamber having a dynamic environment with continuous nitrogen purge. We observed that in both the cases there is a p-type doping in graphene upon exposure to ozone, but, there is a significant difference in the ozone exposure time required to witness a noticeable effect on the transport properties, with the dynamic environment requiring a longer ozone treatment period. The observed effect on graphene devices was found to be reversible under vacuum suggesting a physisorption process. We also demonstrate top-gate GFETs on chemical vapor deposited (CVD) graphene using 10 nm ALD Al2O3 as gate dielectric deposited with the ozone functionalization approach.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.3700451