Enhanced photovoltaic conversion of ZnO/PANI/NiOx heterostructure devices with ZnO nanorod array

An n-i-p type of organic-inorganic hybrid bifacial solar cells was constructed with a ZnO/polyaniline/NiOx heterostructure, in which vertically aligned ZnO nanorods (ZnONd) were synthesized by a facile electrochemical deposition process and act as an electron-transport layer. Semitransparent p-type...

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Bibliographic Details
Published in:Nano express 2020-12, Vol.1 (3), p.30016
Main Authors: Mohammed, Muatez, AbdulAmohsin, Samir, Li, Zhongrui, Zheng, Liqiu
Format: Article
Language:English
Subjects:
Deposition
Electric contacts
Electrical properties
electrochemical deposition
Electron transport
Energy conversion efficiency
Heterostructures
n-i-p photovoltaic devices
Nanorods
Nickel oxides
P-type semiconductors
Photovoltaic cells
Photovoltaic conversion
plasma
Polyanilines
Solar cells
Thin films
Zinc oxide
ZnO nanorods
ZnO/PANI/NiO heterostructure
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Summary:An n-i-p type of organic-inorganic hybrid bifacial solar cells was constructed with a ZnO/polyaniline/NiOx heterostructure, in which vertically aligned ZnO nanorods (ZnONd) were synthesized by a facile electrochemical deposition process and act as an electron-transport layer. Semitransparent p-type semiconducting NiOx films were utilized as a hole-transport layer. Devices based on the ZnONd considerably outperform those employing ZnO thin films. The contact and electrical properties of NiOx can be carefully tuned through controlling the deposition parameters as well as surface treatments. Intimate contact between NiOx with PANI, created by in situ electrochemical polymerization, greatly improves the charge movement. Furthermore, an O2-plasma treatment of the NiOx film has a significant impact on the performance of polyaniline/ZnONd hybrid photovoltaic devices, reflected by the enhancement in the fill-factor and efficiency. The power conversion efficiency of the ZnONd/PANI/NiOx device under the optimized O2 plasma condition can reach up to 2.79% under AM1.5 illumination.
ISSN:2632-959X
2632-959X
DOI:10.1088/2632-959X/abc59a