Charge carrier transport properties of Mg-doped Al0.6Ga0.4N grown by molecular beam epitaxy

We have studied the charge carrier transport properties of Mg-doped AlGaN epilayers with Al composition ∼60% grown by plasma-assisted molecular beam epitaxy. At room temperature, free hole concentration up to 8.7 × 1017 cm−3 was measured, and hole mobility values in the range of 10-17 cm2 V−1 s−1 ca...

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Bibliographic Details
Published in:Semiconductor science and technology 2018-07, Vol.33 (8)
Main Authors: Liu, Xianhe, Pandey, Ayush, Laleyan, David A, Mashooq, Kishwar, Reid, Eric T, Shin, Walter Jin, Mi, Zetian
Format: Article
Language:English
Subjects:
AlGaN
deep UV
p-type doping
wide bandgap
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Summary:We have studied the charge carrier transport properties of Mg-doped AlGaN epilayers with Al composition ∼60% grown by plasma-assisted molecular beam epitaxy. At room temperature, free hole concentration up to 8.7 × 1017 cm−3 was measured, and hole mobility values in the range of 10-17 cm2 V−1 s−1 can be reliably achieved. Significantly, a minimum resistivity of 0.7 cm was measured, and its dependence on the Mg dopant incorporation was identified. Detailed temperature-dependent charge carrier transport studies further revealed that the hole concentration exhibited a negligible dependence on temperature near room temperature, but increases drastically for temperatures above 300 °C, suggesting the importance of impurity band conduction at room temperature.
ISSN:0268-1242
1361-6641
DOI:10.1088/1361-6641/aace97