Influence of defects and indium distribution on emission properties of thick In-rich InGaN layers grown by the DERI technique

Influence of defects and indium distribution on emission properties of thick In-rich InGaN layers grown by the DERI technique

We report on the spatial variation of optical properties in thick, In-rich InGaN layers, grown by a novel droplet elimination by radical beam irradiation (DERI) technique. The increase of layer thickness causes layer relaxation and results in double-peaked photoluminescence spectra. Spatially resolv...

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Bibliographic Details
Published in:Semiconductor science and technology 2017-01, Vol.32 (2), p.25012
Main Authors: Dobrovolskas, Darius, Mickevi ius, J ras, Nargelas, Saulius, Vaitkevi ius, Augustas, Nanishi, Yasushi, Araki, Tsutomu, Tamulaitis, Gintautas
Format: Article
Language:eng
Subjects:
confocal microscopy
defects
DERI
InGaN
photoluminescence
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Summary:We report on the spatial variation of optical properties in thick, In-rich InGaN layers, grown by a novel droplet elimination by radical beam irradiation (DERI) technique. The increase of layer thickness causes layer relaxation and results in double-peaked photoluminescence spectra. Spatially resolved measurements show that the defects in the strained sub-layer are distributed inhomogeneously. An increase in the layer thickness results in faster nonradiative recombination due to increasing density of nonradiative recombination centers, as evidenced by time-resolved free carrier absorption, and facilitates larger indium incorporation in the upper part of the layer.
ISSN:0268-1242
1361-6641