Defect-control electron transport behavior of gallium nitride/silicon nonplanar-structure heterojunction

Abstract Compared with a traditional heterojunction, a nonplanar-structure heterojunction can reduce the problems caused by a lattice mismatch through a three-dimensional stress release mechanism, which will be helpful for promoting the performance and stability of related devices. In this paper, we...

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2022-09, Vol.55 (36), p.364003
Main Authors: Zhang, Yan, Jiang, Hang-Hui, Luo, Yuan-Hang, Xiao, Meng-Zhen, Wen, Chao, Xing, Ya-Kun, Li, Xin-Jian
Format: Article
Language:English
Subjects:
gallium nitride (GaN)
nonplanar-structure heterojunction
point defect
rectification characteristic
silicon nanoporous pillar array (Si-NPA)
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Summary:Abstract Compared with a traditional heterojunction, a nonplanar-structure heterojunction can reduce the problems caused by a lattice mismatch through a three-dimensional stress release mechanism, which will be helpful for promoting the performance and stability of related devices. In this paper, we report our study on the electron transport behavior of a gallium nitride (GaN)/silicon (Si) heterojunction with nonplanar-structure interface, which was prepared through growing GaN on a hierarchical structure, Si nanoporous pillar array (Si-NPA). To clarify the electron transport mechanism and promote the device performance, annealing treatment in ammonia atmosphere was carried out to as-prepared GaN/Si-NPA. The formation of the heterojunction was verified by the typical rectification behavior observed in both as-prepared and annealed samples. After annealing treatment, a lower turn-on voltage, a smaller reverse saturation current density, a larger forward current density and a higher reverse breakdown voltage were obtained, which indicate the promotion of the heterojunction performance. By comparatively studying the spectrum evolution of photoluminescence before and after annealing treatment, the underlying mechanism is clarified as the variation of the type and density of point defects such as gallium vacancy ( V Ga ), oxygen substitutional impurity (O N ), and their complex defect V Ga −O N in GaN. The results illustrate an effective defect-control strategy for optimizing the performance of GaN/Si heterojunction optoelectronic devices.
ISSN:0022-3727
1361-6463
DOI:10.1088/1361-6463/ac78a2