In-rich AlxIn1−xN grown by RF-sputtering on sapphire: from closely-packed columnar to high-surface quality compact layers

The structural, morphological, electrical and optical properties of In-rich AlxIn1−xN (0  

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2017-01, Vol.50 (6)
Main Authors: Núñez-Cascajero, A, Valdueza-Felip, S, Monteagudo-Lerma, L, Monroy, E, Taylor-Shaw, E, Martin, R W, González-Herráez, M, Naranjo, F B
Format: Article
Language:English
Subjects:
AlInN
characterization
III-nitrides
RF-sputtering
semiconductor
Online Access:Get full text
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Description
Summary:The structural, morphological, electrical and optical properties of In-rich AlxIn1−xN (0  
ISSN:0022-3727
1361-6463
DOI:10.1088/1361-6463/aa53d5