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Flexible CMOS chip converted by a novel chip transformation process
In this Letter, the authors report a flexible CMOS chip converted by a novel chip transformation process. To realise a truly flexible CMOS chip, a two-step etching process was employed in the transformation process: (i) vapour etching to remove inter-dielectric layers followed by polymer encapsulati...
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| Published in: | Electronics letters 2020-11, Vol.56 (24), p.1335-1337 |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
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| cites | cdi_FETCH-LOGICAL-c3380-6254d0e5b4c82e5ddb1f9f9777163614c92d8f4c7614b3f0014ad101f7ae87033 |
| container_end_page | 1337 |
| container_issue | 24 |
| container_start_page | 1335 |
| container_title | Electronics letters |
| container_volume | 56 |
| creator | Lai, J Chandrasekaran, S. T Sanyal, A Seo, J.-H |
| description | In this Letter, the authors report a flexible CMOS chip converted by a novel chip transformation process. To realise a truly flexible CMOS chip, a two-step etching process was employed in the transformation process: (i) vapour etching to remove inter-dielectric layers followed by polymer encapsulation and (ii) plasma etching to remove the substrate of the chip. The I–V results measured after the chip transformation process show a voltage variance of |
| doi_str_mv | 10.1049/el.2020.2235 |
| format | article |
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T ; Sanyal, A ; Seo, J.-H</creator><creatorcontrib>Lai, J ; Chandrasekaran, S. T ; Sanyal, A ; Seo, J.-H</creatorcontrib><description>In this Letter, the authors report a flexible CMOS chip converted by a novel chip transformation process. To realise a truly flexible CMOS chip, a two-step etching process was employed in the transformation process: (i) vapour etching to remove inter-dielectric layers followed by polymer encapsulation and (ii) plasma etching to remove the substrate of the chip. The I–V results measured after the chip transformation process show a voltage variance of <0.8% compared to the rigid chip. The bending test also revealed very small changes (0.6%) under strain conditions. Their results offer a viable route to use the foundry-fabricated CMOS chip for flexible chips; thus, a high-performance flexible chip can be realised. This technology will enable us to utilise various foundry-processed chips for future flexible applications such as health and environment monitoring, advanced mobile communication systems, and wearable electronics via a simple post-transformation process.</description><identifier>ISSN: 0013-5194</identifier><identifier>ISSN: 1350-911X</identifier><identifier>EISSN: 1350-911X</identifier><identifier>DOI: 10.1049/el.2020.2235</identifier><language>eng</language><publisher>The Institution of Engineering and Technology</publisher><subject>advanced mobile communication systems ; chip transformation process ; CMOS integrated circuits ; encapsulation ; flexible CMOS chip conversion ; flexible electronics ; foundry‐fabricated CMOS chip ; foundry‐processed chips ; interdielectric layer removal ; plasma etching ; polymer encapsulation ; polymers ; post‐transformation process ; rigid chip ; Semiconductor technology ; sputter etching ; two‐step etching process ; vapour etching ; wearable electronics</subject><ispartof>Electronics letters, 2020-11, Vol.56 (24), p.1335-1337</ispartof><rights>The Institution of Engineering and Technology</rights><rights>2020 The Institution of Engineering and Technology</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c3380-6254d0e5b4c82e5ddb1f9f9777163614c92d8f4c7614b3f0014ad101f7ae87033</cites><orcidid>0000-0003-4045-6291 ; 0000-0002-5039-2503</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,786,790,9779,27957,27958</link.rule.ids></links><search><creatorcontrib>Lai, J</creatorcontrib><creatorcontrib>Chandrasekaran, S. T</creatorcontrib><creatorcontrib>Sanyal, A</creatorcontrib><creatorcontrib>Seo, J.-H</creatorcontrib><title>Flexible CMOS chip converted by a novel chip transformation process</title><title>Electronics letters</title><description>In this Letter, the authors report a flexible CMOS chip converted by a novel chip transformation process. To realise a truly flexible CMOS chip, a two-step etching process was employed in the transformation process: (i) vapour etching to remove inter-dielectric layers followed by polymer encapsulation and (ii) plasma etching to remove the substrate of the chip. The I–V results measured after the chip transformation process show a voltage variance of <0.8% compared to the rigid chip. The bending test also revealed very small changes (0.6%) under strain conditions. Their results offer a viable route to use the foundry-fabricated CMOS chip for flexible chips; thus, a high-performance flexible chip can be realised. This technology will enable us to utilise various foundry-processed chips for future flexible applications such as health and environment monitoring, advanced mobile communication systems, and wearable electronics via a simple post-transformation process.</description><subject>advanced mobile communication systems</subject><subject>chip transformation process</subject><subject>CMOS integrated circuits</subject><subject>encapsulation</subject><subject>flexible CMOS chip conversion</subject><subject>flexible electronics</subject><subject>foundry‐fabricated CMOS chip</subject><subject>foundry‐processed chips</subject><subject>interdielectric layer removal</subject><subject>plasma etching</subject><subject>polymer encapsulation</subject><subject>polymers</subject><subject>post‐transformation process</subject><subject>rigid chip</subject><subject>Semiconductor technology</subject><subject>sputter etching</subject><subject>two‐step etching process</subject><subject>vapour etching</subject><subject>wearable electronics</subject><issn>0013-5194</issn><issn>1350-911X</issn><issn>1350-911X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp9kDFPwzAQhS0EElXpxg_IwMBAyp3txMkIEQWkoA6AxGYlzlkEpUlkh0L_PanCwFAx3Un3vdN7j7FzhCWCTK-pWXLgsORcREdshiKCMEV8O2YzABRhhKk8ZQvv6xJQooxB4oxlq4a-67KhIHtaPwfmve4D07VbcgNVQbkLiqDtttRMl8EVrbed2xRD3bVB7zpD3p-xE1s0nha_c85eV3cv2UOYr-8fs5s8NEIkEMY8khVQVEqTcIqqqkSb2lQphbGIUZqUV4mVRo17KexoWhYVAlpVUKJAiDm7mv4a13nvyOre1ZvC7TSC3negqdH7DvS-gxGPJvyrbmj3L6vv8pzfrkAJCaPuYtLVNOiP7tO1Y6iR-IP3lR2xywPYQSc_XO92Pg</recordid><startdate>20201126</startdate><enddate>20201126</enddate><creator>Lai, J</creator><creator>Chandrasekaran, S. 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T ; Sanyal, A ; Seo, J.-H</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3380-6254d0e5b4c82e5ddb1f9f9777163614c92d8f4c7614b3f0014ad101f7ae87033</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>advanced mobile communication systems</topic><topic>chip transformation process</topic><topic>CMOS integrated circuits</topic><topic>encapsulation</topic><topic>flexible CMOS chip conversion</topic><topic>flexible electronics</topic><topic>foundry‐fabricated CMOS chip</topic><topic>foundry‐processed chips</topic><topic>interdielectric layer removal</topic><topic>plasma etching</topic><topic>polymer encapsulation</topic><topic>polymers</topic><topic>post‐transformation process</topic><topic>rigid chip</topic><topic>Semiconductor technology</topic><topic>sputter etching</topic><topic>two‐step etching process</topic><topic>vapour etching</topic><topic>wearable electronics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lai, J</creatorcontrib><creatorcontrib>Chandrasekaran, S. T</creatorcontrib><creatorcontrib>Sanyal, A</creatorcontrib><creatorcontrib>Seo, J.-H</creatorcontrib><collection>CrossRef</collection><jtitle>Electronics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lai, J</au><au>Chandrasekaran, S. T</au><au>Sanyal, A</au><au>Seo, J.-H</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Flexible CMOS chip converted by a novel chip transformation process</atitle><jtitle>Electronics letters</jtitle><date>2020-11-26</date><risdate>2020</risdate><volume>56</volume><issue>24</issue><spage>1335</spage><epage>1337</epage><pages>1335-1337</pages><issn>0013-5194</issn><issn>1350-911X</issn><eissn>1350-911X</eissn><abstract>In this Letter, the authors report a flexible CMOS chip converted by a novel chip transformation process. To realise a truly flexible CMOS chip, a two-step etching process was employed in the transformation process: (i) vapour etching to remove inter-dielectric layers followed by polymer encapsulation and (ii) plasma etching to remove the substrate of the chip. The I–V results measured after the chip transformation process show a voltage variance of <0.8% compared to the rigid chip. The bending test also revealed very small changes (0.6%) under strain conditions. Their results offer a viable route to use the foundry-fabricated CMOS chip for flexible chips; thus, a high-performance flexible chip can be realised. This technology will enable us to utilise various foundry-processed chips for future flexible applications such as health and environment monitoring, advanced mobile communication systems, and wearable electronics via a simple post-transformation process.</abstract><pub>The Institution of Engineering and Technology</pub><doi>10.1049/el.2020.2235</doi><tpages>3</tpages><orcidid>https://orcid.org/0000-0003-4045-6291</orcidid><orcidid>https://orcid.org/0000-0002-5039-2503</orcidid><oa>free_for_read</oa></addata></record> |
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| identifier | ISSN: 0013-5194 |
| ispartof | Electronics letters, 2020-11, Vol.56 (24), p.1335-1337 |
| issn | 0013-5194 1350-911X 1350-911X |
| language | eng |
| recordid | cdi_iet_journals_10_1049_el_2020_2235 |
| source | IET Digital Library - eJournals |
| subjects | advanced mobile communication systems chip transformation process CMOS integrated circuits encapsulation flexible CMOS chip conversion flexible electronics foundry‐fabricated CMOS chip foundry‐processed chips interdielectric layer removal plasma etching polymer encapsulation polymers post‐transformation process rigid chip Semiconductor technology sputter etching two‐step etching process vapour etching wearable electronics |
| title | Flexible CMOS chip converted by a novel chip transformation process |
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