Harmonic multiplication based on Ge–Sb–Te resistive-switching devices

Harmonic resistive multipliers that exploit the unique current–voltage (I–V) characteristics of Ag/Ge–(Sb)–Te/Pt resistive-switching devices are demonstrated. For a Ge17Sb29Te54-based device, an antisymmetric non-linear I–V curve with a hump-like structure at ±0.4 V is obtained, whereas for a Ge51Te...

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Bibliographic Details
Published in:Electronics letters 2016-10, Vol.52 (21), p.1811-1813
Main Authors: Kanehira, T, Imanishi, Y, Hayashi, H, Nakaoka, T
Format: Article
Language:English
Subjects:
antimony compounds
current‐voltage characteristics
Devices
Electric potential
fifth harmonic multiplication
Ge17Sb29Te54
Ge51Te49
germanium compounds
harmonic resistive multipliers
Harmonics
I‐V characteristics
Multiplication
nonlinear characteristics
Nonlinearity
radio frequency applications
RESET switching
resistive RAM
resistive‐switching devices
Semiconductor technology
SET switching
Switching
Volt-ampere characteristics
Voltage
voltage 0.4 V
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Summary:Harmonic resistive multipliers that exploit the unique current–voltage (I–V) characteristics of Ag/Ge–(Sb)–Te/Pt resistive-switching devices are demonstrated. For a Ge17Sb29Te54-based device, an antisymmetric non-linear I–V curve with a hump-like structure at ±0.4 V is obtained, whereas for a Ge51Te49-based device, an asymmetric non-linear I–V curve with SET switching at +0.4 V and RESET switching at –0.1 V is observed. The Ge17Sb29Te54-based device performs third harmonic multiplication for a 160 MHz input at 0 dBm, and sixth harmonic multiplication at 5 dBm under unbiased conditions without any matching circuit. For the latter device, biasing at a voltage of ±0.4 V leads to fifth harmonic multiplication, which is absent for a 0 dBm input under unbiased conditions. No harmonic multiplication is observed for an unbiased Ge51Te49-based device due to its high resistance, but biasing at the switching voltage of 0.4 V leads to fourth harmonic multiplication for a 0 dBm input. The unique non-linear characteristics of these devices suggest their potential for radio frequency applications.
ISSN:0013-5194
1350-911X
1350-911X
DOI:10.1049/el.2016.2016