Fabrication of poly-Si TFT's on glass with a novel method of back-reflecting low-temperature UV-assisted nickel-induced-crystallization

Polysilicon films are grown on ordinary glass substrates at temperatures as low as 380/spl deg/C using a novel ultra-violet assisted metal-induced-crystallization technique. The silicon films grown using this method are suitable for the fabrication of thin film transistors. Samples prepared, consist...

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Bibliographic Details
Main Authors: Rezaee, L., Mohajerzadeh, S.S., Khakifirooz, A.
Format: Conference Proceeding
Language:English
Subjects:
Crystallization
Fabrication
Glass
Optical films
Optical microscopy
Scanning electron microscopy
Semiconductor films
Silicon
Substrates
Thin film transistors
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Summary:Polysilicon films are grown on ordinary glass substrates at temperatures as low as 380/spl deg/C using a novel ultra-violet assisted metal-induced-crystallization technique. The silicon films grown using this method are suitable for the fabrication of thin film transistors. Samples prepared, consist of 1500 /spl Aring/ of silicon film deposited on 1000 /spl Aring/ silicon nitride and 2000 /spl Aring/ of chromium layers, and Ni is used as the seed for crystallization. Annealing occurred in the presence of an ultra-violet exposure, leads to a high crystallinity of silicon film as examined using TEM, XRD and SEM. The lateral growth as the main feature of this technique is presented using optical microscopy analysis. The preliminary results of transistor fabrication on ordinary glass is reported. Transistors fabricated using this technique show a hole mobility of 50 cm/sup 2//Vs.
DOI:10.1109/ISDRS.2001.984528