A Comparative Study of Single-Event-Burnout for 4H-SiC UMOSFET

SiC UMOSFET is a kind of significant power device in the supply of aerospace. But it is sensitive to space radiation. In this paper, the discrepancy of SEB behavior and research of 4H-SiC UMOSFET with the different values of particle linear energy transfer (LET) are proposed and investigated by the...

Full description

Saved in:
Bibliographic Details
Published in:IEEE journal of the Electron Devices Society 2022, Vol.10, p.373-378
Main Authors: Wang, Ying, Zhou, Jian-cheng, Lin, Mao, Li, Xing-ji, Yang, Jian-Qun, Cao, Fei
Format: Article
Language:English
Subjects:
2-D numerical simulation
Analytical models
buff
Comparative studies
Doping
Electric fields
Electronic devices
Extraterrestrial radiation
Heavy ions
Lattices
linear energy transfer (LET)
MOSFET
MOSFETs
Radiation
Semiconductor process modeling
SiC power MOSFET
Silicon carbide
single-event burnout (SEB)
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:SiC UMOSFET is a kind of significant power device in the supply of aerospace. But it is sensitive to space radiation. In this paper, the discrepancy of SEB behavior and research of 4H-SiC UMOSFET with the different values of particle linear energy transfer (LET) are proposed and investigated by the 2D numerical simulations. And the improved MOSFET with multi-Buff was compared with the conventional UMOSFET. At last, simulation results demonstrated that under high-intensity radiation environment (high LET value heavy ion incidence), the proposed UMOSFET could increase the single-event burnout (SEB) hardness, and using the lattice temperature of device as the SEB behavior characterization of the SiC UMOSFET after heavy ion incidence is more reasonable and accurate than only using high steady-state drain current.
ISSN:2168-6734
2168-6734
DOI:10.1109/JEDS.2022.3158810