Recovery Behavior of Interface Traps After Negative Bias Temperature Instability Stress in p-FinFETs Featuring Fast Trap Characterization Technique

We present an experimental study on the recovery feature of generated interface traps ( \Delta {N}_{\text {IT}} ) after the application of dc/ac negative-bias temperature instability (NBTI) stress in Si p-FinFETs using a fast direct-current current-voltage method. In addition to the delayed recovery...

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Bibliographic Details

Published in:	IEEE transactions on electron devices 2021-09, Vol.68 (9), p.4251-4258
Main Authors:	Zhou, Longda, Zhang, Qingzhu, Yang, Hong, Ji, Zhigang, Wang, Guilei, Liu, Qianqian, Tang, Bo, Gao, Rui, Simoen, Eddy, Yin, Huaxiang, Zhao, Chao, Du, Anyan, Luo, Jun, Wang, Wenwu
Format:	Article
Language:	English
Subjects:	Bias Current measurement Interface stability Interface trap generation Kinetic theory Negative bias temperature instability negative-bias temperature instability (NBTI) recovery after stress Recovery time reliability Si FinFETs Stress Stress measurement Thermal variables control Time measurement
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