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Epitaxial Ferrimagnetic Mn4N Thin Films on GaN by Molecular Beam Epitaxy
Direct epitaxial integration of magnetic layers with wide bandgap nitride semiconductors will enable spin-controlled transport and photonic phenomena, seeding ideas for functional spintronic devices. Using plasma-assisted molecular beam epitaxy (MBE) in a previously unexplored window, significantly...
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Published in: | IEEE transactions on magnetics 2022-02, Vol.58 (2), p.1-6 |
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Main Authors: | , , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Online Access: | Get full text |
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Summary: | Direct epitaxial integration of magnetic layers with wide bandgap nitride semiconductors will enable spin-controlled transport and photonic phenomena, seeding ideas for functional spintronic devices. Using plasma-assisted molecular beam epitaxy (MBE) in a previously unexplored window, significantly improved ferrimagnetic Mn 4 N layers are successfully grown on GaN with ~1 nm surface roughness. Distinct from earlier reports, the Mn 4 N layers grown on GaN are found to be [001] oriented with 12-fold in-plane symmetry in the diffraction pattern. This unique epitaxial registry originates from three equivalent rotational domains. The ferrimagnetic magnetotransport properties of low growth temperature Mn 4 N layers on GaN are comparable to those reported on cubic substrates such as MgO. However, a sign-flip of the Hall resistance is discovered for Mn 4 N layers grown above 300 °C. |
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ISSN: | 0018-9464 1941-0069 |
DOI: | 10.1109/TMAG.2021.3085853 |