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Epitaxial Ferrimagnetic Mn4N Thin Films on GaN by Molecular Beam Epitaxy

Direct epitaxial integration of magnetic layers with wide bandgap nitride semiconductors will enable spin-controlled transport and photonic phenomena, seeding ideas for functional spintronic devices. Using plasma-assisted molecular beam epitaxy (MBE) in a previously unexplored window, significantly...

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Bibliographic Details
Published in:IEEE transactions on magnetics 2022-02, Vol.58 (2), p.1-6
Main Authors: Zhang, Zexuan, Cho, Yongjin, Gong, Mingli, Ho, Shao-Ting, Singhal, Jashan, Encomendero, Jimy, Li, Xiang, Lee, Hyunjea, Xing, Huili Grace, Jena, Debdeep
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Language:English
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Summary:Direct epitaxial integration of magnetic layers with wide bandgap nitride semiconductors will enable spin-controlled transport and photonic phenomena, seeding ideas for functional spintronic devices. Using plasma-assisted molecular beam epitaxy (MBE) in a previously unexplored window, significantly improved ferrimagnetic Mn 4 N layers are successfully grown on GaN with ~1 nm surface roughness. Distinct from earlier reports, the Mn 4 N layers grown on GaN are found to be [001] oriented with 12-fold in-plane symmetry in the diffraction pattern. This unique epitaxial registry originates from three equivalent rotational domains. The ferrimagnetic magnetotransport properties of low growth temperature Mn 4 N layers on GaN are comparable to those reported on cubic substrates such as MgO. However, a sign-flip of the Hall resistance is discovered for Mn 4 N layers grown above 300 °C.
ISSN:0018-9464
1941-0069
DOI:10.1109/TMAG.2021.3085853