A 264-GHz, 2.3-dBm Push-Push Transformer-Based Hartley Oscillator

A high-power subterahertz (THz) push-push oscillator topology is proposed. Adopting Hartley oscillator topology with transformer as its resonator, the proposed oscillator reduces the effective parasitic capacitance of transistors; therefore, a larger size transistor can be adopted, which increases t...

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Bibliographic Details
Published in:IEEE microwave and wireless components letters 2021-07, Vol.31 (7), p.893-896
Main Authors: Utomo, Dzuhri Radityo, Park, Dae-Woong, Hong, Jong-Phil, Lee, Sang-Gug
Format: Article
Language:English
Subjects:
CMOS
CMOS technology
Electrons
Hartley oscillator
high power
Oscillators
Parasitic capacitance
Parasitics (electronics)
Power generation
Q-factor
Resonant frequency
Resonators
Semiconductor devices
terahertz (THz) source
Topology
Transformers
Transistors
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Summary:A high-power subterahertz (THz) push-push oscillator topology is proposed. Adopting Hartley oscillator topology with transformer as its resonator, the proposed oscillator reduces the effective parasitic capacitance of transistors; therefore, a larger size transistor can be adopted, which increases the output power while still maintaining the same oscillation frequency. The adoption of the transformer also improves the LC resonator's Q -factor, further improving the output power and dc-to-RF efficiency. Implemented in 65-nm CMOS technology, the measured output power of the proposed single oscillator is 2.3 dBm at 264 GHz with 2.76% dc-to-RF efficiency and −96.8 dBc/Hz of the phase noise at a 10-MHz offset.
ISSN:1531-1309
2771-957X
1558-1764
2771-9588
DOI:10.1109/LMWC.2021.3077066