TCAD Modeling and Optimization of 28nm HKMG ESF3 Flash Memory

The paper presents a TCAD modeling approach of the 28nm HKMG ESF3 Flash Cell. The methodology encompasses both DC and transient simulations with focus on hot carrier injection modeling. The ensuing Floating Gate Spacer optimization presents the trade-off between the various figures of merit and high...

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Bibliographic Details
Main Authors: Zaka, Alban, Herrmann, Tom, Richter, Ralf, Duenkel, Stefan, Jain, Ruchil
Format: Conference Proceeding
Language:English
Subjects:
Computer architecture
ESF3
Hot carrier injection
Hot Carrier Modeling
Microprocessors
Optimization
Semiconductor device modeling
Semiconductor process modeling
TCAD
Transient analysis
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Summary:The paper presents a TCAD modeling approach of the 28nm HKMG ESF3 Flash Cell. The methodology encompasses both DC and transient simulations with focus on hot carrier injection modeling. The ensuing Floating Gate Spacer optimization presents the trade-off between the various figures of merit and highlights the need for a comprehensive DC/transient simulation approach during Flash cell optimization.
ISSN:1946-1577
DOI:10.23919/SISPAD49475.2020.9241647