Self-Aligned Single Diffusion Break Technology Optimization Through Material Engineering for Advanced CMOS Nodes

Though single diffusion break (SDB) acts as an efficient area-scaling enabler for current CMOS technology nodes, it degrades devices' variability performance, which can be mitigated by enabling self-aligned SDB (SA-SDB) technology. Unfortunately, SA-SDB causes PMOS performance degradation due t...

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Bibliographic Details
Main Authors: Pal, Ashish, Bazizi, El Mehdi, Jiang, Liu, Saremi, Mehdi, Alexander, Blessy, Ayyagari-Sangamalli, Buvna
Format: Conference Proceeding
Language:English
Subjects:
CMOS technology
FinFET
Integrated circuit modeling
MOS devices
Performance evaluation
Ring-oscillator
Self-aligned Single Diffusion Break
Semiconductor device modeling
Semiconductor process modeling
Stress relaxation
Tensile stress
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Summary:Though single diffusion break (SDB) acts as an efficient area-scaling enabler for current CMOS technology nodes, it degrades devices' variability performance, which can be mitigated by enabling self-aligned SDB (SA-SDB) technology. Unfortunately, SA-SDB causes PMOS performance degradation due to channel stress relaxation. To solve this issue, we propose material engineering of SA-SDB technology to improve PMOS performance. Using 3D-TCAD simulations, we show that by using stressed oxide for the SA-SDB cavity fill, both PMOS and NMOS device performance can be improved. Furthermore, using ring-oscillator as a representative circuit for CMOS technology evaluation, we showed that the circuit performance can be improved by 13-21% for 2-3 GPa stress in the oxide, thus enabling simultaneous area-scaling and circuit and variability performance improvement with SA-SDB technology for advanced CMOS nodes.
ISSN:1946-1577
DOI:10.23919/SISPAD49475.2020.9241625