N-channel versus p-channel flash EEPROM-which one has better reliabilities

In this paper, a comprehensive study of n- and p-channel flash cells in terms of performance and reliability is presented. In particular, hot-carrier reliability issues such as disturbs and endurance in both n- and p-channel flash cells are also investigated. The most serious reliability issue in p-...

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Bibliographic Details
Main Authors: Chung, S.S., Liaw, S.T., Yih, C.M., Ho, Z.H., Lin, C.J., Kuo, D.S., Liang, M.S.
Format: Conference Proceeding
Language:English
Subjects:
Application software
Channel hot electron injection
CMOS technology
Current measurement
Flash memory
Guidelines
Hot carriers
Nonvolatile memory
Reliability engineering
Tunneling
Online Access:Request full text
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Summary:In this paper, a comprehensive study of n- and p-channel flash cells in terms of performance and reliability is presented. In particular, hot-carrier reliability issues such as disturbs and endurance in both n- and p-channel flash cells are also investigated. The most serious reliability issue in p-channel flash memory, drain disturb, can be overcome by using a DINOR structure. These results can be used as a guideline for designers. Although the n-channel flash cell exhibits higher electron mobilities, the p-channel flash cell is most advantageous with features such as high speed, better reliability, and low power. These properties meet scaling trends to make this cell a promising candidate for future flash memory applications.
DOI:10.1109/RELPHY.2001.922884