A Novel HCI Reliability Model for RF/mmWave Applications in FDSOI Technology

Although technology scaling to deep submicron enable higher degrees of semiconductor integration, highly integrated circuit have become increasingly sensitive to the slightest parameter drift. One of the main causes of parameter degradation in recent technologies is the Hot Carrier Injection (HCI),...

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Bibliographic Details
Main Authors: Arfaoui, W., Bossu, G., Muhlhoff, A., Lipp, D., Manuwald, R., Chen, T., Nigam, T., Siddabathula, M.
Format: Conference Proceeding
Language:English
Subjects:
Breakdown voltage
Degradation
Electric breakdown
Human computer interaction
Predictive models
Semiconductor device modeling
Silicon-on-insulator
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Summary:Although technology scaling to deep submicron enable higher degrees of semiconductor integration, highly integrated circuit have become increasingly sensitive to the slightest parameter drift. One of the main causes of parameter degradation in recent technologies is the Hot Carrier Injection (HCI), a progressive wear out phenomenon whose understanding and modeling has become mandatory in new CMOS nodes. Therefore, we present in this paper a new HCI reliability model for Fully Depleted Silicon On Insulator (FDSOI) MOSFETs which covers the RF/mmWave (Radiofrequency /millimeter wave) applications taking into account back bias operation.
ISSN:1938-1891
DOI:10.1109/IRPS45951.2020.9129479