An Ultra-Low-Noise Swing-Boosted Differential Relaxation Oscillator in 0.18-μm CMOS

This article presents an ultra-low-noise differential relaxation oscillator that achieves a phase noise figure of merits (FoMs) of 157.7 and 162.1 dBc/Hz, respectively, at 1- and 100-kHz frequency offsets. The oscillator is inherently robust against 1/f noise, while swing-boosting minimizes the ph...

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Bibliographic Details
Published in:IEEE journal of solid-state circuits 2020-09, Vol.55 (9), p.2489-2497
Main Authors: Lee, Junghyup, George, Arup K., Je, Minkyu
Format: Article
Language:English
Subjects:
Capacitors
CMOS
Jitter
low phase noise
Noise
Offsets
Phase noise
Power demand
Power efficiency
Relaxation oscillators
swing-boosting
Thermal noise
Timing
Vibration
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Summary:This article presents an ultra-low-noise differential relaxation oscillator that achieves a phase noise figure of merits (FoMs) of 157.7 and 162.1 dBc/Hz, respectively, at 1- and 100-kHz frequency offsets. The oscillator is inherently robust against 1/f noise, while swing-boosting minimizes the phase noise arising out of thermal noise. Furthermore, an inverter-based differential comparator maximizes power efficiency, enabling FoMs close to the fundamental limits. Operating at 10.5 MHz and consuming 219.8 \mu \text{W} from a 1.4-V supply, the oscillator achieves a period jitter of 9.86 ps rms , equivalent to a relative jitter of 0.01%. The oscillator occupies an active area of 0.015 mm 2 in a 0.18- \mu \text{m} standard CMOS process.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2020.2987681