Self-Heating Analysis of GaN-HEMT for Various Ambient Temperature and Substrate Thickness

Impact of substrate thickness on self-heating effect for AlGaN/GaN HEMT is analyzed. Self-heating effect is analyzed using Technology Computer Aided Design (TCAD) simulation. GaN-HEMT with gate width of 1mm and gate length of 0.7 μm is considered for the analysis. In the simulation, substrate thickn...

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Bibliographic Details
Main Authors: Arivazhagan, L., Mohammed Jarndal, Anwar Hasan, Chander, Subhash, Godfrey, D., Kumar J.S., Raj, Bhagyalakshmi, S., Reddy, Pavan Kumar, Nirmal, D.
Format: Conference Proceeding
Language:English
Subjects:
Aluminum gallium nitride
Ambient Temperature
GaN
HEMT
HEMTs
Kink Effect
Logic gates
Reliability
Self-heating
Substrate
Substrates
Temperature
Temperature measurement
Wide band gap semiconductors
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Summary:Impact of substrate thickness on self-heating effect for AlGaN/GaN HEMT is analyzed. Self-heating effect is analyzed using Technology Computer Aided Design (TCAD) simulation. GaN-HEMT with gate width of 1mm and gate length of 0.7 μm is considered for the analysis. In the simulation, substrate thickness is varied from 100 μm to 200 μm to study its impact on self-heating effect and drain current. In addition, the ambient temperature is varied from 300K to 700K and its impact is analyzed. Impact of gate-gate spacing on thermal performance is also analyzed. Furthermore, Kink effect on drain current at V GS =-2V is observed.
ISSN:2644-1802
DOI:10.1109/ICDCS48716.2020.243595