SiGe bipolar technology for mixed digital and analogue RF applications

A SiGe bipolar technology with a low-resistivity base integrated into a double-polysilicon self-aligned transistor has been developed. A transit frequency of 85 GHz, a maximum oscillation frequency of 128 GHz, 6.8 ps gate delay, and a minimum noise figure of 1.2 dB at 10 GHz demonstrate balanced tra...

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Bibliographic Details
Main Authors: Bbck, J., Meister, T.F., Knapp, H., Zoschg, D., Schafer, H., Aufinger, K., Wurzer, M., Boguth, S., Franosch, M., Stengl, R., Schreiter, R., Rest, M., Treitinger, L.
Format: Conference Proceeding
Language:English
Subjects:
Boron
Circuits
Delay
Epitaxial growth
Frequency conversion
Germanium silicon alloys
Noise figure
Radio frequency
Silicon germanium
Vehicle dynamics
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Summary:A SiGe bipolar technology with a low-resistivity base integrated into a double-polysilicon self-aligned transistor has been developed. A transit frequency of 85 GHz, a maximum oscillation frequency of 128 GHz, 6.8 ps gate delay, and a minimum noise figure of 1.2 dB at 10 GHz demonstrate balanced transistor performance. With an 88 GHz dynamic frequency divider and a 12 GHz low noise amplifier with 1.9 dB noise figure, state-of-the-art results for digital as well as analogue applications are achieved.
DOI:10.1109/IEDM.2000.904425