Characteristics of TaN gate MOSFET with ultrathin hafnium oxide (8 /spl Aring/-12 /spl Aring/)

MOSFET's with equivalent oxide thickness of 8-12 /spl Aring/ have been demonstrated by using high-K gate dielectric thin films (HfO/sub 2/) and TaN gate electrode. Both self-aligned (higher thermal budget process) and non-self-aligned process (low thermal budget as in the replacement gate proce...

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Bibliographic Details
Main Authors: Byoung Hun Lee, Choi, R., Kang, L., Gopalan, S., Nieh, R., Onishi, K., Jeon, Y., Wen-Jie Qi, Kang, C., Lee, J.C.
Format: Conference Proceeding
Language:English
Subjects:
Annealing
CMOS process
Electrodes
Hafnium oxide
High K dielectric materials
High-K gate dielectrics
MOSFET circuits
Silicon
Sputtering
Temperature
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Summary:MOSFET's with equivalent oxide thickness of 8-12 /spl Aring/ have been demonstrated by using high-K gate dielectric thin films (HfO/sub 2/) and TaN gate electrode. Both self-aligned (higher thermal budget process) and non-self-aligned process (low thermal budget as in the replacement gate process) were used and compared. Excellent electrical characteristics (e.g. S/spl sim/68 mV/dec) and reliability characteristics (e.g. high E/sub BD/, low charge trapping and SILC) were also obtained.
DOI:10.1109/IEDM.2000.904254