Demonstration of BEOL-compatible ferroelectric Hf0.5Zr0.5O2 scaled FeRAM co-integrated with 130nm CMOS for embedded NVM applications

We demonstrate successful scalability of conventional 100μm diameter TiN/HZO/TiN capacitors down to 300nm by successfully co-integrating them for the first time in the Back-End-Of-Line of 130nm CMOS technology. Excellent performance are reported on those scaled bitcells, such as remnant polarization...

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Main Authors: Francois, T., Pellissier, C., Slesazeck, S., Havel, V., Richter, C., Makosiej, A., Giraud, B., Breyer, E. T., Materano, M., Chiquet, P., Bocquet, M., Grenouillet, L., Nowak, E., Schroeder, U., Gaillard, F., Coignus, J., Blaise, P., Carabasse, C., Vaxelaire, N., Magis, T., Aussenac, F., Loup, V.
Format: Conference Proceeding
Language:English
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Summary:We demonstrate successful scalability of conventional 100μm diameter TiN/HZO/TiN capacitors down to 300nm by successfully co-integrating them for the first time in the Back-End-Of-Line of 130nm CMOS technology. Excellent performance are reported on those scaled bitcells, such as remnant polarization 2.PR > 40μC/cm 2 , endurance > 10 11 cycles, switching speeds
ISSN:2156-017X
DOI:10.1109/IEDM19573.2019.8993485