Size-Dependent Switching Properties of Spin-Orbit Torque MRAM With Manufacturing-Friendly 8-Inch Wafer-Level Uniformity

We have developed a manufacturing-friendly spin-orbit torque magnetic random access memory (SOT-MRAM) technology in CMOS compatible 8-inch fab process. The proposed SOT-MRAM process technology resolves etching non-uniformity and reduction of high resistivity heavy-metal nanowire resistance issues. B...

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Bibliographic Details
Published in:	IEEE journal of the Electron Devices Society 2020, Vol.8, p.163-169
Main Authors:	Rahaman, Sk Ziaur, Wang, I-Jung, Wang, Ding-Yeong, Pai, Chi-Feng, Hsin, Yu-Chen, Yang, Shan-Yi, Lee, Hsin-Han, Chang, Yao-Jen, Kuo, Yi-Ching, Su, Yi-Hui, Chen, Guan-Long, Chen, Fang-Ming, Wei, Jeng-Hua, Hou, Tuo-Hung, Sheu, Shyh-Shyuan, Wu, Chih-I, Deng, Duan-Lee
Format:	Article
Language:	eng
Subjects:	Current density magnetic tunnel junction Magnetic tunneling Resistance spin-hall effect spin-orbit torque spin-transfer torque Spintronics Stability criteria Switches Thermal stability
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Summary:	We have developed a manufacturing-friendly spin-orbit torque magnetic random access memory (SOT-MRAM) technology in CMOS compatible 8-inch fab process. The proposed SOT-MRAM process technology resolves etching non-uniformity and reduction of high resistivity heavy-metal nanowire resistance issues. Besides, we present device size-dependent switching current threshold in the proposed SOT-MRAM cell structure. To realize the potential of our fabricated SOT-MRAM, wafer-level uniformity, cycling and temperature dependence SOT switching have been comprehensively investigated. Furthermore, the thermal stability factor ( {\Delta } ) was calculated from temperature-dependence SOT switching to fulfill the thermal stability criteria, i.e., > 10 years of this emerging SOT-MRAM technology.
ISSN:	2168-6734 2168-6734