Correlation Between Electromigration-Related Void Volumes and Time-to-Failure by High Resolution X-Ray Tomography and Modeling

High resolution synchrotron tomography has demonstrated a proportionality between electromigration induced void volume and time-to-failure in hybrid bonding based test structures. A conventional failure by voiding in long feed lines was observed. Process induced bonding voids do not affect reliabili...

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Bibliographic Details
Published in:IEEE electron device letters 2019-11, Vol.40 (11), p.1808-1811
Main Authors: Moreau, Stephane, Fraczkiewicz, Alexandra, Bouchu, David, Bleuet, Pierre, Cloetens, Peter, Cesar Da Silva, Julio, Manzanarez, Herve, Lorut, Frederic, Lhostis, Sandrine
Format: Article
Language:English
Subjects:
Bonding
Correlation
Electromigration
electromigration (EM)
Engineering Sciences
Failure analysis
finite element modeling (FEM)
High resolution
Hybrid bonding-based integration
Imaging
interconnect
Materials
Mean time to failure
Micro and nanotechnologies
Microelectronics
reliability
Reliability analysis
Resistance
synchrotron
time-to-failure
Tomography
void volume
X-ray nano-tomography
X-ray tomography
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Summary:High resolution synchrotron tomography has demonstrated a proportionality between electromigration induced void volume and time-to-failure in hybrid bonding based test structures. A conventional failure by voiding in long feed lines was observed. Process induced bonding voids do not affect reliability of the analyzed samples.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2019.2945089