Room temperature continuous-wave operation of GaInNAs long wavelength VCSELs

Vertical cavity surface-emitting lasers (VCSELs) are becoming increasingly important for short-haul optical fiber transmission systems. Given the commercial success of GaAs-based 850 nm VCSELs, dramatic enhancements in transmission bandwidth and distance can be achieved in conventional single- and m...

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Bibliographic Details
Main Authors: Larson, M.C., Coldren, C.W., Spruytte, S.G., Petersen, H.E., Harris, J.S.
Format: Conference Proceeding
Language:English
Subjects:
Bandwidth
Fiber lasers
Gallium arsenide
Mirrors
Optical fibers
Optical materials
Optical surface waves
Surface emitting lasers
Temperature
Vertical cavity surface emitting lasers
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Summary:Vertical cavity surface-emitting lasers (VCSELs) are becoming increasingly important for short-haul optical fiber transmission systems. Given the commercial success of GaAs-based 850 nm VCSELs, dramatic enhancements in transmission bandwidth and distance can be achieved in conventional single- and multi-mode fiber by extending the emission wavelength to the 1300 nm-1550 nm range. GaInNAs is a promising active layer material grown on GaAs that can achieve 1300 nm emission (Kondow et al., 1997), and electrically pulsed broad-area GaInNAs VCSELs (Larson et al., 1998; Coldren et al., 2000) have been realized. Here, we take advantage of the properties of GaAs-based materials-thermally-conductive high contrast mirrors and AlAs-oxide current apertures-to demonstrate for the first time low-threshold (/spl sim/1 mA) GaInNAs VCSELs emitting at a wavelength of 1200 nm under continuous-wave (CW) room temperature operation.
DOI:10.1109/DRC.2000.877113