Direct Digital Synthesizer with 14 GS/s Sampling Rate Heterogeneously Integrated in InP HBT and GaN HEMT on CMOS

A 14 GS/s direct digital synthesizer (DDS) heterogeneously integrated with InP and GaN on CMOS is presented. The DDS includes over 6 million 45 nm CMOS FETs, 2151 InP HBTs, 2 GaN HEMTs, and 9930 heterogeneous interconnects, making it the most complex heterogeneously integrated mixed-signal circuit r...

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Bibliographic Details
Main Authors: Turner, Steven Eugene, Meredith, James M., Byrd, Justin M., Kushner, Lawrence J., Stuenkel, Mark E., Madison, Gary M., Cartwright, Justin A., Harwood, Richard L., Cali, Joseph D., Chadwick, Steve A., Oh, Michael, Matta, John T.
Format: Conference Proceeding
Language:English
Subjects:
bipolar integrated circuits
Clocks
CMOS integrated circuits
direct digital synthesizer
Gallium nitride
GaN
HEMTs
heterogeneous integrated circuits
III-V semiconductor materials
Indium phosphide
InP
mixed analog digital integrated circuits
Power demand
Power generation
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Summary:A 14 GS/s direct digital synthesizer (DDS) heterogeneously integrated with InP and GaN on CMOS is presented. The DDS includes over 6 million 45 nm CMOS FETs, 2151 InP HBTs, 2 GaN HEMTs, and 9930 heterogeneous interconnects, making it the most complex heterogeneously integrated mixed-signal circuit reported to date. By heterogeneously integrating multiple technologies, a high output power of 6.9 dBm is achieved while maintaining better than 37 dBc Nyquist SFDR and 8.7 W power consumption - performance currently unachievable with state-of-the-art single-technology approaches.
ISSN:2375-0995
DOI:10.1109/RFIC.2019.8701821