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Scalable Analytical Model of 1.7 THz Cut-off Frequency Schottky Diodes Integrated in 55nm BiCMOS Technology
In this paper, an innovative Schottky diode architecture is proposed and implemented in 55 nm BiCMOS technology. A State-of-the-art 1.7 THz cut-off frequency is measured and an analytical scalable model is proposed and experimentally validated paving the way for further performance improvement. In a...
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Main Authors: | , , , , , , , , , |
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Format: | Conference Proceeding |
Language: | English |
Subjects: | |
Online Access: | Request full text |
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Summary: | In this paper, an innovative Schottky diode architecture is proposed and implemented in 55 nm BiCMOS technology. A State-of-the-art 1.7 THz cut-off frequency is measured and an analytical scalable model is proposed and experimentally validated paving the way for further performance improvement. In addition, this analytical model can be integrated in a Design Kit library in order to enable sub-THz Schottky diode-based circuit designs in advanced BiCMOS. |
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ISSN: | 2375-0995 |
DOI: | 10.1109/RFIC.2019.8701728 |