12-mW 97-GHz Low-Power Downconversion Mixer With 0.7-V Supply Voltage

This letter presents a 97-GHz downconversion mixer in a 130-nm SiGe HBT technology. For achieving the demonstrated ultralow dc power consumption, the mixer was designed with transistors operating in saturation using an accurate compact model. With 0.7-V supply voltage and -5-dBm local oscillator pum...

Full description

Saved in:
Bibliographic Details
Published in:IEEE microwave and wireless components letters 2019-04, Vol.29 (4), p.279-281
Main Authors: Zhang, Yaxin, Liang, Wenfeng, Sakalas, Paulius, Mukherjee, Anindya, Jin, Xiaodi, Krause, Julia, Schroter, Michael
Format: Article
Language:English
Subjects:
<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">W -band
Baluns
Downconversion mixer
Electric potential
Frequency ranges
HICUM model
low power
Mixers
Power consumption
Power measurement
Radio frequency
Semiconductor devices
SiGe HBT
Silicon germanium
Transistors
Universal Serial Bus
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This letter presents a 97-GHz downconversion mixer in a 130-nm SiGe HBT technology. For achieving the demonstrated ultralow dc power consumption, the mixer was designed with transistors operating in saturation using an accurate compact model. With 0.7-V supply voltage and -5-dBm local oscillator pumping power, this mixer achieves a double-sideband conversion gain (CG) of 6.6 ± 3 dB over the RF frequency range from 91 to 100 GHz, consuming 12-mW static dc power. With the supply voltage further reduced to 0.5 V, this mixer still works with a maximum upper-sideband CG of 5.2 dB from 94 to 100 GHz, with only 8-mW static power consumption.
ISSN:1531-1309
2771-957X
1558-1764
2771-9588
DOI:10.1109/LMWC.2019.2901410