Polarization Engineering of AlGaN/GaN HEMT With Graded InGaN Sub-Channel for High-Linearity X-Band Applications

We report on the power and linearity performance of metal-organic chemical vapor deposition grown polarization-engineered novel structure that combines the AlGaN/GaN high-electron-mobility transistor with a graded InGaN sub-channel layer. The fabricated transistors with composite two-dimensional(2D)...

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Bibliographic Details
Published in:IEEE electron device letters 2019-04, Vol.40 (4), p.522-525
Main Authors: Sohel, Shahadat H., Xie, Andy, Beam, Edward, Xue, Hao, Razzak, Towhidur, Bajaj, Sanyam, Cao, Yu, Lee, Cathy, Lu, Wu, Rajan, Siddharth
Format: Article
Language:English
Subjects:
Aluminum gallium nitride
Aluminum gallium nitrides
composite 2D-3D channel
Figure of merit
Gallium nitrides
graded InGaN channel
HEMTs
Indium gallium nitrides
Linearity
Logic gates
Metalorganic chemical vapor deposition
Organic chemicals
Organic chemistry
Polarization
polarization-graded field-effect transistor
Power gain
Semiconductor devices
Superhigh frequencies
Three dimensional composites
Transconductance
Transistor linearity
Transistors
Two dimensional composites
two-tone linearity
Wide band gap semiconductors
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Summary:We report on the power and linearity performance of metal-organic chemical vapor deposition grown polarization-engineered novel structure that combines the AlGaN/GaN high-electron-mobility transistor with a graded InGaN sub-channel layer. The fabricated transistors with composite two-dimensional(2D) and three-dimensional(3D) electron channels showed nearly flat transconductance and power gain profiles. The maximum f T and f max values of 18 GHz and 38 GHz were measured for 0.7-μm gate-length transistors. Load-pull measurement at 10 GHz revealed a maximum output power of 2.2 W/mm. Two-tone measurement at 10 GHz showed an excellent OIP3 of 38 dBm for 150-μm device width and a corresponding linearity figure of merit OIP3/P DC of 9.7 dB. These results suggest that InGaN-based composite 2D-3D channel transistors could be useful for high-frequency applications requiring high linearity.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2019.2899100