High-Mobility Ge pMOSFETs With Crystalline ZrO2 Dielectric

High-mobility Ge pMOSFETs with crystalline ZrO 2 gate dielectric are realized and compared against devices with O 3 /ZrO 2 , amorphous ZrO 2 , and Al 2 O 3 /ZrO 2 gate dielectrics. The crystallization of ZrO 2 provides for significantly improved effective hole mobility ( \boldsymbol {\mu }_{\textsf...

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Bibliographic Details
Published in:IEEE electron device letters 2019-03, Vol.40 (3), p.371-374
Main Authors: Liu, Huan, Han, Genquan, Xu, Yang, Liu, Yan, Liu, Tsu-Jae King, Hao, Yue
Format: Article
Language:English
Subjects:
Aluminum oxide
Annealing
Capacitance
Charge density
Crystal structure
crystalline
Crystallinity
Crystallization
Dielectrics
Germanium
Hole mobility
Logic gates
mobility
MOSFET
Passivity
Silicon
Zirconium dioxide
ZrO2
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Summary:High-mobility Ge pMOSFETs with crystalline ZrO 2 gate dielectric are realized and compared against devices with O 3 /ZrO 2 , amorphous ZrO 2 , and Al 2 O 3 /ZrO 2 gate dielectrics. The crystallization of ZrO 2 provides for significantly improved effective hole mobility ( \boldsymbol {\mu }_{\textsf {eff}} ) and reduced capacitance equivalent thickness (CET), boosting the transistor drive current. An interfacial Al 2 O 3 passivation layer enhances \boldsymbol {\mu }_{\textsf {eff}} but increases the CET. Passivation-free Ge pMOSFETs with 2.5-nm crystalline ZrO 2 gate dielectric achieve a higher \boldsymbol {\mu }_{\textsf {eff}} than previously reported unstrained Ge pMOSFETs with the CET below 1 nm, at a high inversion-layer charge density.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2019.2895856