Gate-Emitter Pre-threshold Voltage as a Health-Sensitive Parameter for IGBT Chip Failure Monitoring in High-Voltage Multichip IGBT Power Modules

This paper proposes a novel health-sensitive parameter, called the gate-emitter pre-threshold voltage V GE(pre-th) , for detecting IGBT chip failures in multichip IGBT power modules. The proposed method has been applied in an IGBT gate driver and measures the V GE at a fixed time instant of the V GE...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on power electronics 2019-09, Vol.34 (9), p.9158-9169
Main Authors: Mandeya, Richard, Chen, Cuili, Pickert, Volker, Naayagi, R. T., Ji, Bing
Format: Article
Language:English
Subjects:
Current measurement
Emitters
Health monitoring
High voltages
high-voltage (HV) multichip insulated gate bipolar transistor (IGBT) module
IGBT chip failure
Insulated gate bipolar transistors
Logic gates
Modules
Monitoring
Multichip modules
Parameter sensitivity
Semiconductor device measurement
Threshold voltage
Wires
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This paper proposes a novel health-sensitive parameter, called the gate-emitter pre-threshold voltage V GE(pre-th) , for detecting IGBT chip failures in multichip IGBT power modules. The proposed method has been applied in an IGBT gate driver and measures the V GE at a fixed time instant of the V GE transient before the threshold voltage occurs. To validate the proposed method, theoretical analysis and practical results for a 16-chip IGBT power module are presented in the paper. The results show a 500 mV average shift in the measured V GE(pre-th) for each IGBT chip failure.
ISSN:0885-8993
1941-0107
DOI:10.1109/TPEL.2018.2884276