Two-stage newton–raphson method for transistor-level simulation

In this paper, we introduce an efficient transistorlevel simulation tool with SPICE-accuracy for deepsubmicrometer very large-scale integration circuits with strong-coupling effects. The new approach uses multigrid for huge networks of power/ground, clock, and interconnect with strong coupling. Mutu...

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Bibliographic Details
Published in:IEEE transactions on computer-aided design of integrated circuits and systems 2007-05, Vol.26 (5), p.881-895
Main Authors: Zhu, Zhengyong, Peng, He, Cheng, Chung-Kuan, Rouz, Khosro, Borah, Manjit, Kuh, Ernest S.
Format: Article
Language:English
Subjects:
Analytical models
Circuit design
Circuit simulation
Complexity theory
Computer simulation
Convergence
Coupling
Electronic devices
Equivalent circuits
Inductance
Integrated circuit modeling
multi-grid
Newton-Raphson method
RLC circuits
Semiconductor devices
time-domainanalysis
Transistors
Very large scale integration
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Summary:In this paper, we introduce an efficient transistorlevel simulation tool with SPICE-accuracy for deepsubmicrometer very large-scale integration circuits with strong-coupling effects. The new approach uses multigrid for huge networks of power/ground, clock, and interconnect with strong coupling. Mutual inductance can be incorporated without error-prone matrix sparsification approximations or expensive matrix inversion. Transistor devices are integrated using a novel two-stage Newton–Raphson method to dynamically model the linear network and nonlinear devices boundary. Orders-ofmagnitude speedup over Berkeley SPICE3 is observed for sets of real deep-submicrometer design circuits.
ISSN:0278-0070
1937-4151
DOI:10.1109/TCAD.2007.8361582