Effect of Al2O3 Passivation Layer and Cu Electrodes on High Mobility of Amorphous IZO TFT

In this paper, we present a high mobility amorphous indium-zinc-oxide (a-IZO) thin film transistor (TFT) based on copper (Cu) source/drain electrodes (S/D) and aluminum oxide (Al 2 O 3 ) passivation layer (PVL). The mechanism of high mobility for the a-IZO TFT based on Cu S/D with Al 2 O 3 PVL was p...

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Bibliographic Details
Published in:IEEE journal of the Electron Devices Society 2018-01, Vol.6, p.733-737
Main Authors: Hu, Shiben, Peng, Junbiao, Ning, Honglong, Lu, Kuankuan, Fang, Zhiqiang, Tao, Ruiqiang, Yao, Rihui, Zou, Jianhua, Xu, Miao, Wang, Lei
Format: Article
Language:English
Subjects:
a-IZO
Aluminum oxide
Contact resistance
Copper
Electrodes
Leakage current
mobility
Passivity
Resistance
Schottky barriers
Schottky contact
Semiconductor devices
Sputtering
Thin film transistors
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Summary:In this paper, we present a high mobility amorphous indium-zinc-oxide (a-IZO) thin film transistor (TFT) based on copper (Cu) source/drain electrodes (S/D) and aluminum oxide (Al 2 O 3 ) passivation layer (PVL). The mechanism of high mobility for the a-IZO TFT based on Cu S/D with Al 2 O 3 PVL was proposed and experimentally demonstrated. The sputtering of Al 2 O 3 PVL induced a highly conductive channel layer due to the formation of In-rich layer on the back channel. Also, Cu S/D presented Schottky contact behavior compared with Mo S/D which behaved like Ohmic contact. Because the Schottky contact can block leakage current and the highly conductive channel achieved high on-current, the a-IZO TFT based on Cu S/D and Al 2 O 3 PVL performed remarkable saturation mobility up to 412.7 cm 2 /Vs. This paper presents a feasible way to implement high mobility TFT arrays with Cu electrodes.
ISSN:2168-6734
DOI:10.1109/JEDS.2018.2820003