Tunneling Transistors Based on MoS2/MoTe2 Van der Waals Heterostructures

2-D transition metal dichalcogenides (TMDs) are promising materials for CMOS application due to their ultrathin channel with excellent electrostatic control. TMDs are especially well suited for tunneling field-effect transistors (TFETs) due to their low-dielectric constant and their promise of atomi...

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Bibliographic Details
Published in:IEEE journal of the Electron Devices Society 2018-01, Vol.6, p.1048-1055
Main Authors: Balaji, Yashwanth, Mocuta, Dan, Groeseneken, Guido, Smets, Quentin, De La Rosa, Cesar Javier Lockhart, Lu, Anh Khoa Augustin, Chiappe, Daniele, Agarwal, Tarun, Lin, Dennis H. C., Huyghebaert, Cedric, Radu, Iuliana
Format: Article
Language:English
Subjects:
2D materials
band-to-band tunneling
CMOS
Computer architecture
Density functional theory
Discrete Fourier transforms
Field effect transistors
Heterojunctions
Heterostructures
Homojunctions
Logic gates
Molybdenum
Molybdenum compounds
Molybdenum disulfide
Schottky contacts
Semiconductor devices
Sulfur
Tellurides
Temperature
TFET
TFETs
TMD
Transconductance
Transistors
Transition metal compounds
Tunneling
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Summary:2-D transition metal dichalcogenides (TMDs) are promising materials for CMOS application due to their ultrathin channel with excellent electrostatic control. TMDs are especially well suited for tunneling field-effect transistors (TFETs) due to their low-dielectric constant and their promise of atomically sharp and self-passivated interfaces. Here, we experimentally demonstrate band-to-band tunneling (BTBT) in Van der Waals heterostructures formed by MoS 2 and MoTe 2 . Density functional theory simulations of the band structure show our MoS 2 -MoTe 2 heterojunctions have a staggered band alignment, which boosts BTBT compared to a homojunction configuration. Low-temperature measurements and electrostatic simulations provide understanding toward the role of Schottky contacts and the material thickness on device performance. Negative differential transconductance-based devices were also demonstrated using a different device architecture. This paper provides the prerequisites and challenges required to overcome at the contact region to achieve a steep subthreshold slope and high ON-currents with 2-D-based TFETs.
ISSN:2168-6734
DOI:10.1109/JEDS.2018.2815781