Mg diffusion formed p-type GaN

Summary form only given. In the development of GaN and related nitride compound, using Mg doping to form a p-type GaN plays a critical role for making green-to-blue light emitting devices. Despite of the progress in the in-situ Mg doping process, the conventional post-growth doping techniques, such...

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Bibliographic Details
Main Authors: Jia-Liang Yen, Fuh-Shyang, Ying-Jay Yang
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Diffusion processes
Doping
Etching
Furnaces
Gallium nitride
Human computer interaction
MOCVD
Ohmic contacts
Temperature measurement
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Summary:Summary form only given. In the development of GaN and related nitride compound, using Mg doping to form a p-type GaN plays a critical role for making green-to-blue light emitting devices. Despite of the progress in the in-situ Mg doping process, the conventional post-growth doping techniques, such as the diffusion process to achieve higher hole concentration for better p-type ohmic contact or device operation, haven't been successfully demonstrated yet. Also due to the lack of reliable process the diffusion properties of Mg, which may affect the device structure and operation, still remain unknown. In this paper, we report on Mg diffusion into unintentionally doped n-type GaN resulting in p-type GaN formation.
ISSN:1092-8081
2766-1733
DOI:10.1109/LEOS.1999.813463