Charge control performance of an ultra-low energy ion implanter

This paper describes an evaluation the charge control characteristics of an inline plasma cell installed at the end of the beamline on an Eaton NV-GSD/ULE2 (ULE) ultra-low energy ion implanter. The charge test vehicles used included Sematech Process-Induced Defect Effect Revealer-Manufacturing Equip...

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Bibliographic Details
Main Authors: Dyer, D.E., Krull, W.A., Ranganathan, R., Sedgewick, J.E., Rendon, M.J.
Format: Conference Proceeding
Language:English
Subjects:
Cells (biology)
Electrons
Floods
Implants
Monitoring
Performance evaluation
Plasma devices
Plasma properties
Testing
Vehicles
Online Access:Request full text
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Summary:This paper describes an evaluation the charge control characteristics of an inline plasma cell installed at the end of the beamline on an Eaton NV-GSD/ULE2 (ULE) ultra-low energy ion implanter. The charge test vehicles used included Sematech Process-Induced Defect Effect Revealer-Manufacturing Equipment Monitor (SPIDER-MEM) devices and CHARM(R)-2 devices. Implants on these test vehicles were performed with varied plasma cell parameter settings. The results are compared with the performance of an Eaton NV-GSD200E (GSD) implanter with a secondary electron flood system (SEF) and another NV-GSD200E with a plasma flood system (PFS).
DOI:10.1109/IIT.1999.812166