Wafer surface treatment for bonding GaInAsP and magnetooptic garnet

GaInAsP surfaces were investigated by contact angle measurement to estimate their hydrophilicity for completing wafer direct bonding with magnetooptic garnet. Wafer direct bonding was successfully achieved between O/sub 2/ plasma activated GaInAsP and garnet crystals. This technique has been applied...

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Bibliographic Details
Main Authors: Mizumoto, T., Yokoi, H., Shimizu, M., Waniishi, T., Futakuchi, N., Kaida, N., Nakano, Y.
Format: Conference Proceeding
Language:English
Subjects:
Crystals
Diode lasers
Gain measurement
Garnets
Goniometers
Integrated optics
Isolators
Plasma measurements
Surface treatment
Wafer bonding
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Summary:GaInAsP surfaces were investigated by contact angle measurement to estimate their hydrophilicity for completing wafer direct bonding with magnetooptic garnet. Wafer direct bonding was successfully achieved between O/sub 2/ plasma activated GaInAsP and garnet crystals. This technique has been applied with the aim of integrating a laser diode and an optical isolator.
ISSN:1092-8081
2766-1733
DOI:10.1109/LEOS.1999.811819