Origin of Electrical Instabilities in Self-Aligned Amorphous In-Ga-Zn-O Thin-Film Transistors

This paper examined the performance and bias stability of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) with a self-aligned coplanar structure. The activation energy barrier responsible for the positive bias thermal stress (PBTS)-induced instability of the a-IGZO TFTs with low oxygen lo...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 2017-12, Vol.64 (12), p.4965-4973
Main Authors: On, Nuri, Kang, Youngho, Song, Aeran, Ahn, Byung Du, Kim, Hye Dong, Lim, Jun Hyung, Chung, Kwun-Bum, Han, Seungwu, Jeong, Jae Kyeong
Format: Article
Language:English
Subjects:
Amorphous In–Ga–Zn–O (<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">a -IGZO)
cation interstitial
Degradation
instability
Loading
Logic gates
oxygen vacancy
Performance evaluation
Temperature measurement
Thin film transistors
thin-film transistor (TFT)
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This paper examined the performance and bias stability of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) with a self-aligned coplanar structure. The activation energy barrier responsible for the positive bias thermal stress (PBTS)-induced instability of the a-IGZO TFTs with low oxygen loadings can be attributed to the migration of cation interstitial defects. However, the IGZO TFTs with high oxygen loadings could not be explained by the existing defect model. The first-principle calculation indicates that the cation vacancy, such as V In , with the hydrogen incorporation plays an important role in determining the PBTS-dependent degradation of the threshold voltage.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2017.2766148