CMOS-Compatible Contacts to n-InP

In the context of the development of silicon photonics, various Ti- and Ni-based alloyed metallizations have been investigated for the purpose of forming low resistivity and Si CMOS-compatible contacts to n-InP. The innovative Ni 2 P metallization combined with an in situ Ar + preclean represents th...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2017-11, Vol.64 (11), p.4408-4414
Main Authors: Ghegin, Elodie, Rodriguez, Philippe, Pasquali, Mattia, Sagnes, Isabelle, Labar, Janos L., Delaye, Vincent, Card, Tiphaine, Da Fonseca, Jeremy, Jany, Christophe, Nemouchi, Fabrice
Format: Article
Language:English
Subjects:
Conductivity
III-V laser
Lasers
metal/n-InP contacts
Metallization
Silicon photonics
Temperature
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Summary:In the context of the development of silicon photonics, various Ti- and Ni-based alloyed metallizations have been investigated for the purpose of forming low resistivity and Si CMOS-compatible contacts to n-InP. The innovative Ni 2 P metallization combined with an in situ Ar + preclean represents the most suitable available solution for the formation of ohmic contacts with a specific contact resistivity as low as 4.3 × 10 -6 Ω.cm 2 on such a semiconductor. The latter additionally presents the advantage of being stable at least up to 350 °C and could therefore withstand additional integration processes conducted at this temperature.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2017.2747619