A 0.24 /spl mu/m SiGe BiCMOS mixed-signal RF production technology featuring a 47 GHz f/sub t/ HBT and 0.18 /spl mu/m L/sub ett/ CMOS

A new base-after-gate integration scheme has been developed to integrate a 47 GHz f/sub t/, 65 GHz F/sub max/SiGe HBT process with a 0.24 /spl mu/m CMOS technology having 0.18 /spl mu/m L/sub eff/ and 5 nm gate oxide. We discuss the benefits and challenges of this integration scheme which decouples...

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Bibliographic Details
Main Authors: St. Onge, S.A., Harame, D.L., Dunn, J.S., Subbanna, S., Ahlgren, D.C., Freeman, G., Jagannathan, B., Jeng, J., Schonenberg, K., Stein, K., Groves, R., Coolbaugh, D., Feilchenfeld, N., Geiss, P., Gordon, M., Gray, P., Hershberger, D., Kilpatrick, S., Johnson, R., Joseph, A., Lanzerotti, L., Malinowski, J., Orner, B., Zierak, M.
Format: Conference Proceeding
Language:English
Subjects:
BiCMOS integrated circuits
CMOS process
CMOS technology
FETs
Germanium silicon alloys
Heterojunction bipolar transistors
Production
Radio frequency
Silicon germanium
Space technology
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Summary:A new base-after-gate integration scheme has been developed to integrate a 47 GHz f/sub t/, 65 GHz F/sub max/SiGe HBT process with a 0.24 /spl mu/m CMOS technology having 0.18 /spl mu/m L/sub eff/ and 5 nm gate oxide. We discuss the benefits and challenges of this integration scheme which decouples the HBT from the CMOS thermal cycles. We also describe the resulting 0.24 /spl mu/m SiGe BiCMOS technology, BiCMOS 6HP, which includes a 7 nm dual gate oxide option and full suite of passive components. The technology provides a high level of integration for mixed-signal RF applications.
ISSN:1088-5714
DOI:10.1109/BIPOL.1999.803539