Strain-balanced type-II superlattices on GaAs: Novel heterostructures for photonics and photovoltaics

We present a theoretical analysis of the optoelectronic properties of type-II GaAs 1-x Bi x /GaN y As 1-y quantum wells( QWs) grown on GaAs substrates. We eludicate the broad scope for band structure engineering in these novel heterostructures, demonstrating that they offer emission and absorption o...

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Bibliographic Details
Main Authors: Broderick, Christopher A., Wanshu Xiong, Shirong Jin, Marko, Igor P., Bushell, Zoe L., Hild, Konstanze, Ludewig, Peter, Stolz, Wolfgang, Volz, Kerstin, Rorison, Judy M., Sweeney, Stephen J., O'Reilly, Eoin P.
Format: Conference Proceeding
Language:English
Subjects:
Absorption
Gallium arsenide
Metals
Photonic band gap
Photonics
Prototypes
Substrates
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Summary:We present a theoretical analysis of the optoelectronic properties of type-II GaAs 1-x Bi x /GaN y As 1-y quantum wells( QWs) grown on GaAs substrates. We eludicate the broad scope for band structure engineering in these novel heterostructures, demonstrating that they offer emission and absorption out to mid-infrared wavelengths in structures which can be grown with little or no net strain relative to GaAs. We confirm our analysis by comparing to experiments on a prototype GaAs 0.967 Bi 0.033 /GaN 0.062 As 0.938 structure, which show room temperature photoluminescence (PL) and absorption at a wavelength of 1.72 μm (one of the longest achieved to date from a pseudomorphic GaAs-based heterostructure). Overall, we demonstrate that this new class of type-II QWs has significant promise for (i) extending the wavelength range accessible to the GaAs material platform, and (ii) the development of long-wavelength photonic devices and highly efficient solar cells.
ISSN:2158-3242
DOI:10.1109/NUSOD.2017.8010018