Improvements of Interfacial and Electrical Properties for Ge MOS Capacitor by Using TaYON Interfacial Passivation Layer and Fluorine Incorporation

Ge metal-oxide-semiconductor capacitor with HfTiON/TaYON stacked gate dielectric treated by fluorine plasma is fabricated, and its interfacial and electrical properties are compared with its counterparts without the TaYON interfacial passivation layer or the fluorine-plasma treatment. Experimental r...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2017-09, Vol.64 (9), p.3528-3533
Main Authors: Huang, Yong, Xu, Jing-Ping, Liu, Lu, Cheng, Zhi-Xiang, Lai, Pui-To, Tang, Wing-Man
Format: Article
Language:English
Subjects:
Capacitance
Capacitors
Current leakage
Dielectrics
Electric potential
Electrical properties
Fluorine
Fluorine-plasma treatment
Gates
Ge metal–oxide–semiconductor (MOS)
Germanium
High-k dielectric materials
interface properties
Interlayers
Leakage current
Leakage currents
Logic gates
Oxides
Passivation
Passivity
Plasma
Substrates
TaYON passivation layer
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Summary:Ge metal-oxide-semiconductor capacitor with HfTiON/TaYON stacked gate dielectric treated by fluorine plasma is fabricated, and its interfacial and electrical properties are compared with its counterparts without the TaYON interfacial passivation layer or the fluorine-plasma treatment. Experimental results show that the sample exhibits excellent performances: low interface-state density (2.5 × 10 11 cm -2 eV -1 ), small flatband voltage (0.34 V), good capacitance-voltage behavior, small frequency dispersion, and low gate leakage current (2.47 × 10 -5 A/cm 2 at Vg = V fb + 1 V). These should be attributed to the suppressed growth of unstable Ge oxides on the Ge surface during gate dielectric annealing by the TaYON interlayer and fluorine incorporation, thus greatly reducing the defective states at/near the TaYON/Ge interface and improving the electrical properties of the device.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2017.2723886